Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry

Lithium ions with dosages of 2.6 10, 2.6 10, 2.6 10, and 2.6 10 cm 2 have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass spectrometry. In general, the diffusion profiles show relatively little movement of Li in the GaN thin film for temperatures up to 700 1C. At low-temperature anneals (o500 1C), up-hill diffusion dominated the Li profiles and at high-temperature anneals (4800 1C), out-diffusion dominated the Li profiles. r 2006 Elsevier Ltd. All rights reserved.